MOCD217M ?dual channel phototransistor small outline surface mount optocouplers (low input current) ?005 fairchild semiconductor corporation www.fairchildsemi.com MOCD217M rev. 1.0.5 april 2013 MOCD217M dual channel phototransistor small outline surface mount optocouplers (low input current) features ul recognized (file #e90700, volume 2) vde recognized (file #136616) (add option ??for vde approval, i.e, mocd217vm) low input current (specified @ 1ma) minimum bv ceo of 30 volts guaranteed convenient plastic soic-8 surface mountable package style standard soic-8 footprint, with 0.050" lead spacing high input-output isolation of 2500 v ac(rms) guaranteed applications interfacing and coupling systems of different potentials and impedances general purpose switching circuits monitor and detection circuits description the MOCD217M device consists of two gallium arsenide infrared emitting diodes optically coupled to two mono- lithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. it is ideally suited for high density applications and eliminates the need for through-the-board mounting. schematic package outline emitter 1 collector 1 anode 1 cathode 1 1 2 3 4 5 6 7 8 emitter 2 collector 2 anode 2 cathode 2 figure 1. schematic figure 2. package outline
?005 fairchild semiconductor corporation www.fairchildsemi.com MOCD217M rev. 1.0.5 2 MOCD217M ?dual channel phototransistor small outline surface mount optocouplers (low input current) absolute maximum ratings stresses exceeding the absolute maximum ratings may damage the device. the device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. in addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. t a = 25? unless otherwise speci?d. notes: 1. input-output isolation voltage, v iso , is an internal device dielectric breakdown rating. 2. for this test, pins 1, 2, 3 and 4 are common and pins 5, 6, 7 and 8 are common. 3. v iso rating of 2500 v ac(rms) for t = 1 minute is equivalent to a rating of 3,000 v ac(rms) for t = 1 second. symbol rating value unit emitter i f forward current ?continuous 60 ma i f (pk) forward current ?peak (pw = 100 ?, 120 pps) 1.0 a v r reverse voltage 6.0 v p d led power dissipation @ t a = 25? derate above 25? 90 0.8 mw mw/? detector v ceo collector-emitter voltage 30 v v eco emitter-base voltage 7.0 v i c collector current-continuous 150 ma p d detector power dissipation @ t a = 25? derate above 25? 150 1.76 mw mw/? total device v iso input-output isolation voltage (f = 60 hz, t = 1 minute) 2500 vac(rms) p d total device power dissipation @ t a = 25? derate above 25? 250 2.94 mw mw/? t a ambient operating temperature range -40 to +100 ? t stg storage temperature range -40 to +150 ?
?005 fairchild semiconductor corporation www.fairchildsemi.com MOCD217M rev. 1.0.5 3 MOCD217M ?dual channel phototransistor small outline surface mount optocouplers (low input current) electrical characteristics t a = 25? unless otherwise speci?d. *typical values at t a = 25? notes: 1. input-output isolation voltage, v iso , is an internal device dielectric breakdown rating. 2. for this test, pins 1, 2, 3 and 4 are common and pins 5, 6, 7 and 8 are common. 3. v iso rating of 2500 v ac(rms) for t = 1 minute is equivalent to a rating of 3,000 v ac(rms) for t = 1 second. 4. current transfer ratio (ctr) = i c / i f x 100%. symbol parameter test conditions min. typ.* max. unit emitter v f input forward voltage i f = 10 ma 1.05 1.3 v i r reverse leakage current v r = 6.0 v 0.1 100 ? c capacitance 18 pf detector i ceo1 collector-emitter dark current v ce = 10 v, t a = 25? 1.0 50 na i ceo2 v ce = 10 v, t a = 100? 1.0 ? bv ceo collector-emitter breakdown voltage i c = 100 ? 30 90 v bv eco emitter-collector breakdown voltage i e = 100 ? 7.0 7.8 v c ce collector-emitter capacitance f = 1.0 mhz, v ce = 0 v 7.0 pf coupled ctr current transfer ratio (4) i f = 1.0 ma, v ce = 5 v 100 130 % v ce (sat) collector-emitter saturation voltage i c = 2.0 ma, i f = 10 ma 0.35 0.4 v t on turn-on time i c = 2.0 ma, v cc = 10 v, r l = 100 (fig. 8) 7.5 ? t off turn-off time i c = 2.0 ma, v cc = 10 v, r l = 100 (fig. 8) 5.7 ? t r rise time i c = 2.0 ma, v cc = 10 v, r l = 100 (fig. 8) 3.2 ? t f fall time i c = 2.0 ma, v cc = 10 v, r l = 100 (fig. 8) 4.7 ? v iso isolation surge voltage (1)(2)(3) f = 60 hz, t = 1 minute 2500 vac(rms) r iso isolation resistance (2) v i-o = 500 v 10 11 c iso isolation capacitance (2) v i-o = 0 v, f = 1 mhz 0.2 pf
?005 fairchild semiconductor corporation www.fairchildsemi.com MOCD217M rev. 1.0.5 4 MOCD217M ?dual channel phototransistor small outline surface mount optocouplers (low input current) typical performance curves figure 4. output curent vs. input current i f - led input current (ma) 0.1 1 10 100 i c output collector current (normalized) 0.01 0.1 1 10 v ce = 5v normalized to i f = 10 ma figure 5. output current vs. ambient temperature t a ambient temperature ( o c) -80 -60 -40 -20 0 20 40 60 80 100 120 i c output collector current (normalized) 0.1 1 10 normalized to t a = 25 o c figure 6. output current vs. collector - emitter voltage v ce collector-emitter voltage (v) 012345678 9 10 i c output collector current (normalized) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i f = 10 ma norm alized to v ce = 5 v figure 7. dark current vs. ambient temperature t a ambient temperature ( o c) 0 20406080100 i ceo collector -emitter dark current (na) 0.1 1 10 100 1000 10000 v ce = 10 v i f - led forward current (ma) v f ?forward voltage (v) figure 3. led forward voltage vs. forward current 1 10 100 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 t a = -55 c t a = 25 c t a = 100 c
?005 fairchild semiconductor corporation www.fairchildsemi.com MOCD217M rev. 1.0.5 5 MOCD217M ?dual channel phototransistor small outline surface mount optocouplers (low input current) output pulse input pulse test circuit waveforms t r t f input i f r l v cc = 10 v output adjust i f to produce i c = 2 ma t on 10% 9 0% t off i c figure 8. switching time test circuit and waveform
?005 fairchild semiconductor corporation www.fairchildsemi.com MOCD217M rev. 1.0.5 6 MOCD217M ?dual channel phototransistor small outline surface mount optocouplers (low input current) package dimensions 8-pin soic surface mount recommended pad layout package drawings are provided as a service to customers considering fairchild components. drawings may change in any manner without notice. please note the revision and/or date on the drawing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package speci?ations do not expand the terms of fairchild s worldwide terms and conditions, speci?ally the warranty therein, which covers fairchild products. always visit fairchild semiconductor s online packaging area for the most recent package drawings: http://www .f airchildsemi.com/pac kaging/ lead coplanarity: 0.004 (0.10) max 0.202 (5.13) 0.182 (4.63) 0.021 (0.53) 0.011 (0.28) 0.050 (1.27) typ. 0.164 (4.16) 1 8 0.144 (3.66) 0.244 (6.1 9 ) 0.224 (5.6 9 ) 0.143 (3.63) 0.123 (3.13) 0.008 (0.20) 0.003 (0.08) 0.010 (0.25) 0.006 (0.16) seating p lane 0.024 (0.61) 0.050 (1.27) dimensions in inches (mm). 0.155 (3. 9 4) 0.275 (6. 99 ) 0.060 (1.52)
?005 fairchild semiconductor corporation www.fairchildsemi.com MOCD217M rev. 1.0.5 7 MOCD217M ?dual channel phototransistor small outline surface mount optocouplers (low input current) ordering information marking information option order entry identi?r description v v vde 0884 r2 r2 tape and reel (2500 units per reel) r2v r2v vde 0884, tape and reel (2500 units per reel) 1 2 6 4 3 5 de?itions 1 fairchild logo 2 device number 3 vde mark (note: only appears on parts ordered with vde option ?see order entry table) 4 one digit year code, e.g., ? 5 two digit work week ranging from ?1 to ?3 6 assembly package code d217 s yy x v
?005 fairchild semiconductor corporation www.fairchildsemi.com MOCD217M rev. 1.0.5 8 MOCD217M ?dual channel phototransistor small outline surface mount optocouplers (low input current) carrier tape specifications 4.0 0.10 1.5 min user direction of feed 2.0 0.05 1.75 0.10 5.5 0.05 12.0 0.3 8.0 0.10 0.30 max 8.3 0.10 3.50 0.20 dimensions in mm 0.1 max 6.40 0.20 5.20 0.20 1.5 0.1
?005 fairchild semiconductor corporation www.fairchildsemi.com MOCD217M rev. 1.0.5 9 MOCD217M ?dual channel phototransistor small outline surface mount optocouplers (low input current) re?w pro?e pro?e freature pb-free assembly pro?e temperature minimum (tsmin) 150? temperature maximum (tsmax) 200? time (t s ) from (tsmin to tsmax) 60?20 seconds ramp-up rate (t l to t p ) 3?/second maximum liquidous temperature (t l ) 217? time (t l ) maintained above (t l ) 60?50 seconds peak body package temperature 260? +0? / ?? time (t p ) within 5? of 260? 30 seconds ramp-down rate (t p to t l ) 6?/second maximum time 25? to peak temperature 8 minutes maximum time (seconds) temperature ( c) time 25? to peak 260 240 220 200 180 160 140 120 100 80 60 40 20 0 t l t s t l t p t p ts m a x ts m i n 120 preheat area max. ramp-up rate = 3?/s max. ramp-down rate = 6?/s 240 360
?005 fairchild semiconductor corporation www.fairchildsemi.com MOCD217M rev. 1.0.5 10 MOCD217M ?dual channel phototransistor small outline surface mount optocouplers (low input current)
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